MSE PRO??AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire?substrate
Other layer structures can be custom made upon request. Please contact us for a quote.
| SKU |
WA0285 |
| Substrate |
Type |
Flat Sapphire |
| Polishing |
Single Side Polished (standard)
Double Sides Polished (available upon request)
|
| Dimension |
100+/-0.2 mm (4 inch) |
| Orientation |
C plane (0001) off angle toward M-axis 0.2+/-0.1 deg |
| Thickness |
660+/-25 um |
| Epilayer |
Structure |
~2nm GaN/~25nm AlGaN/~1nm AlN/~300nm GaN/~2um C-doped GaN/~20nm AlN buffer/ Sapphire |
| Roughness(Ra) |
~0.5 nm |
| Dislocation density |
<1x109 cm-2
|
| Rs |
<400ohm/sq |
| 2DEG Ns |
>8x1012?cm-2
|
| 2DEG Mobility |
>1500?cm2/Vs |
| Usable area |
>90% |
Related Publications
-
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard; K. Doverspike; W.L. Pribble; S.T. Allen; J.W. Palmour; L.T. Kehias; T.J. Jenkins
- Trapping effects in GaN and SiC microwave FETs S.C. Binari; P.B. Klein; T.E. Kazior
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrate Slant Field Plates Y. Dora; A. Chakraborty; L. Mccarthy; S. Keller; S.P. Denbaars; U.K. Mishra
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
- High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs V. Tilak; B. Green; V. Kaper; H. Kim; T. Prunty; J. Smart; J. Shealy; L. Eastman
- Measured microwave power performance of AlGaN/GaN MODFET Y.-F. Wu; B.P. Keller; S. Keller; D. Kapolnek; S.P. Denbaars; U.K. Mishra
- CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
- AlN/GaN insulated -Gate HFETs Using Cat-CVD SiN M. Higashiwaki; T. Mimura; T. Matsui
- Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage
Noah Davis - 2024-03-03
Very happy with my purchase. The shipping speed was amazing, and the product quality is really good. Great customer service too.